document number: 94557 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 1 int-a-pak power module thyristor/diode, 300 a vskl300-08pbf vishay high power products features ? electrically isolated base plate ? 3000 v rms isolating voltage ? industrial standard package ? simplified mechanical designs, rapid assembly ? high surge capability ? large creepage distances ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec applications ? battery chargers ? welders ? power converters ?alternators electrical specifications product summary i t(av) 300 a int-a-pak major ratings and characteristics symbol characteristics values units v drm /v rrm 800 v i t(av) 53 c 300 a i tsm 50 hz 6500 a 60 hz 6900 i 2 t 50 hz 214 ka 2 s 60 hz 195 i 2 t 2140 ka 2 s t j range - 40 to 140 c voltage ratings type number v rrm /v drm , maximum repetitive peak reverse voltage v v rsm /v dsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma vskl300-08pbf 800 900 50
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94557 2 revision: 04-may-10 vskl300-08pbf vishay high power products int-a-pak power module thyristor/diode, 300 a on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction half sine wave 300 a 53 c maximum rms on-state current i t(rms) as ac switch 116 a maximum peak, one-cycle on-state, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sine half wave, initial t j = t j maximum 6600 t = 8.3 ms 6900 t = 10 ms 100 % v rrm reapplied 5500 t = 8.3 ms 5800 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 214 ka 2 s t = 8.3 ms 195 t = 10 ms 100 % v rrm reapplied 151 t = 8.3 ms 138 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 2140 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j maximum 0.796 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j maximum 0.868 low level value on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j maximum 0.972 m high level value on-state slope resistance r t2 (i > x i t(av) ), t j maximum 0.88 maximum on-state voltage drop v tm t j = 25 c, 500 a i pk scr 1.35 v v fm diode 1.20 switching parameter symbol test conditions values units typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 300 a, t j = t j maximum, di/dt = 20 a/s, v r = 50 v dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 67 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i drm , i rrm t j = t j maximum, rated v drm /v rrm applied 50 ma rms insulation voltage v ins 50 hz, circuit to base, all te rminal shorted, t = 1 s 3000 v
document number: 94557 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 3 vskl300-08pbf int-a-pak power module thyristor/diode, 300 a vishay high power products note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum required dc gate voltage to trigger v gt t j = 25 c anode supply: 12 v resistive load 3v maximum required dc ga te current to trigger i gt 200 ma maximum holding current i h 600 maximum peak positi ve gate voltage +v gm t j = t j maximum, t p 5 ms 20 v maximum peak negati ve gate voltage -v gm 5.0 dc gate voltage not to trigger v gd t j = t j maximum maximum gate current/volta ge not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 0.30 v dc gate current not to trigger i gd 10 ma maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 140 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to ca se per junction r thjc dc operation 0.19 k/w maximum thermal resistance, case to heatsink per module r thcs mounting surface smooth, flat and greased 0.035 mounting torque 10 % iap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. 4 to 6 nm busbar to iap approximate weight 500 g 17.8 oz. case style int-a-pak r conduction per junction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 vskl300 0.019 0.022 0.028 0.041 0.068 0.013 0.023 0.031 0.043 0.069 k/w
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94557 4 revision: 04-may-10 vskl300-08pbf vishay high power products int-a-pak power module thyristor/diode, 300 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current average on-state current (a) maximum allowable case temperature (c) 0 50 1 00 1 50 2 00 2 50 300 350 0 50 100 150 conduction angle 180 120 90 60 30 average on-state current (a) maximum allowable case temperature (c) 0 100 200 300 400 500 0 50 100 150 conduction angle 180 120 90 60 30 dc average on-state current (a) maximum average on-state power loss (w) 0 50 100 150 200 250 300 350 0 100 200 300 400 500 180 120 90 60 30 rms limit conduction angle average on-state current (a) maximum average on-state power loss (w) 0 100 200 300 400 50 0 0 100 200 300 400 500 600 180 120 90 60 30 rms limit conduction period dc peak half sine wave on-state current (a) number of equal amplitude half cycle current pulsed (n) 110100 2500 3000 3500 4000 4500 5000 5500 6000 maximum non-repetitive surge current versus pulse train duration initial tj = 140c no voltage reapplied rated vrrm reapplied pulse train durations (s) peak half sine wave on-state current (a) 0.01 0.1 1 10 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 maximum non-repetitive surge current versus pulse train duration initial tj = 140c no voltage reapplied rated vrrm reapplied
document number: 94557 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 5 vskl300-08pbf int-a-pak power module thyristor/diode, 300 a vishay high power products fig. 7 - on-state voltage drop characteristics (scr) fig. 8 - on-state voltage drop characteristics (diode) fig. 9 - thermal impedance z thjc characteristics ordering information table instantaneous on-state voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000 10000 tj = 25c tj = 140c instantaneous on-state current (a) instantaneous on-state voltage (v) instantaneous on-state current (a) 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 1000 10000 tj = 25c tj = 140c transient thermal impedance z thjc (k/w) 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0001 0.001 0.01 0.1 1 single pulse (thermal resistance) square wave pulse duration (s) 1 - module type 2 - circuit configuration (l = scr/diode doubler negative control) 3 - current rating (300 = 300 a) 4 - voltage rating (08 = 800 v) 5 - pbf = lead (pb)-free device code 4 13 2 5 vsk l 300 - 08 pbf
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94557 6 revision: 04-may-10 vskl300-08pbf vishay high power products int-a-pak power module thyristor/diode, 300 a circuit configuration links to related documents dimensions www.vishay.com/doc?95010 - ~ + k2 g2 - + 1 2 3 ~
document number: 95010 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 29-sep-08 1 int-a-pak diode outline dimensions vishay semiconductors dimensions in millimeters (inches) abcde 23 (0.91) 30 (1.18) 36 (1.42) - - (see table) a a e d c b 8 (0.32) 3 screws m6 x 1 2 holes ? 6.5 2 1 3 2 1 94 (3.70) 80 (3.15) 7 (0.27) 34 (1.34)
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